thermal: exynos: remove parsing of samsung,tmu_gain property
Since pdata gain values are SoC (not platform) specific just move it from platform data to struct exynos_tmu_data instance. Then remove parsing of samsung,tmu_gain property. There should be no functional changes caused by this patch. Signed-off-by: Bartlomiej Zolnierkiewicz <b.zolnierkie@samsung.com> Reviewed-by: Daniel Lezcano <daniel.lezcano@linaro.org> Signed-off-by: Eduardo Valentin <edubezval@gmail.com>
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@ -192,6 +192,8 @@
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* @max_efuse_value: maximum valid trimming data
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* @temp_error1: fused value of the first point trim.
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* @temp_error2: fused value of the second point trim.
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* @gain: gain of amplifier in the positive-TC generator block
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* 0 < gain <= 15
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* @reference_voltage: reference voltage of amplifier
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* in the positive-TC generator block
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* 0 < reference_voltage <= 31
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@ -219,6 +221,7 @@ struct exynos_tmu_data {
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u32 min_efuse_value;
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u32 max_efuse_value;
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u16 temp_error1, temp_error2;
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u8 gain;
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u8 reference_voltage;
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struct regulator *regulator;
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struct thermal_zone_device *tzd;
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@ -368,8 +371,6 @@ static int exynos_tmu_initialize(struct platform_device *pdev)
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static u32 get_con_reg(struct exynos_tmu_data *data, u32 con)
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{
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struct exynos_tmu_platform_data *pdata = data->pdata;
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if (data->soc == SOC_ARCH_EXYNOS4412 ||
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data->soc == SOC_ARCH_EXYNOS3250)
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con |= (EXYNOS4412_MUX_ADDR_VALUE << EXYNOS4412_MUX_ADDR_SHIFT);
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@ -378,7 +379,7 @@ static u32 get_con_reg(struct exynos_tmu_data *data, u32 con)
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con |= data->reference_voltage << EXYNOS_TMU_REF_VOLTAGE_SHIFT;
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con &= ~(EXYNOS_TMU_BUF_SLOPE_SEL_MASK << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
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con |= (pdata->gain << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
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con |= (data->gain << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
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con &= ~(EXYNOS_TMU_TRIP_MODE_MASK << EXYNOS_TMU_TRIP_MODE_SHIFT);
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con |= (EXYNOS_NOISE_CANCEL_MODE << EXYNOS_TMU_TRIP_MODE_SHIFT);
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@ -1135,14 +1136,8 @@ MODULE_DEVICE_TABLE(of, exynos_tmu_match);
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static int exynos_of_sensor_conf(struct device_node *np,
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struct exynos_tmu_platform_data *pdata)
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{
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u32 value;
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int ret;
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of_node_get(np);
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ret = of_property_read_u32(np, "samsung,tmu_gain", &value);
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pdata->gain = (u8)value;
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of_property_read_u32(np, "samsung,tmu_cal_type", &pdata->cal_type);
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of_node_put(np);
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@ -1196,6 +1191,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
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data->tmu_read = exynos4210_tmu_read;
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data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
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data->ntrip = 4;
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data->gain = 15;
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data->reference_voltage = 7;
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data->efuse_value = 55;
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data->min_efuse_value = 40;
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@ -1213,6 +1209,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
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data->tmu_set_emulation = exynos4412_tmu_set_emulation;
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data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
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data->ntrip = 4;
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data->gain = 8;
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data->reference_voltage = 16;
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data->efuse_value = 55;
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if (data->soc != SOC_ARCH_EXYNOS5420 &&
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@ -1229,6 +1226,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
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data->tmu_set_emulation = exynos4412_tmu_set_emulation;
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data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
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data->ntrip = 8;
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data->gain = 8;
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if (res.start == EXYNOS5433_G3D_BASE)
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data->reference_voltage = 23;
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else
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@ -1244,6 +1242,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
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data->tmu_set_emulation = exynos5440_tmu_set_emulation;
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data->tmu_clear_irqs = exynos5440_tmu_clear_irqs;
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data->ntrip = 4;
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data->gain = 5;
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data->reference_voltage = 16;
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data->efuse_value = 0x5d2d;
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data->min_efuse_value = 16;
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@ -1256,6 +1255,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
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data->tmu_set_emulation = exynos4412_tmu_set_emulation;
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data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
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data->ntrip = 8;
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data->gain = 9;
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data->reference_voltage = 17;
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data->efuse_value = 75;
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data->min_efuse_value = 15;
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@ -40,15 +40,11 @@ enum soc_type {
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/**
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* struct exynos_tmu_platform_data
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* @gain: gain of amplifier in the positive-TC generator block
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* 0 < gain <= 15
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* @cal_type: calibration type for temperature
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*
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* This structure is required for configuration of exynos_tmu driver.
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*/
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struct exynos_tmu_platform_data {
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u8 gain;
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u32 cal_type;
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};
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