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mtd: bcm47xxnflash: increase NFLASH_READY_RETRIES 

Recently imlemented writing support has shown that current num of
retries is too low. Writing requires longer waiting than simple reading.

Signed-off-by: Rafał Miłecki <zajec5@gmail.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
This commit is contained in:
Rafał Miłecki 2012-12-24 17:34:29 +01:00 committed by David Woodhouse
parent ca2a88f56a
commit 5a40b5fb2b
1 changed files with 2 additions and 2 deletions
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4
drivers/mtd/nand/bcm47xxnflash/ops_bcm4706.c
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@ -17,8 +17,8 @@
#include "bcm47xxnflash.h"
/* Broadcom uses 1'000'000 but it seems to be too many. Tests on WNDR4500 has
* shown 164 retries as maxiumum. */
#define NFLASH_READY_RETRIES 1000
* shown ~1000 retries as maxiumum. */
#define NFLASH_READY_RETRIES 10000
#define NFLASH_SECTOR_SIZE 512