Add the Intel manufacturer Id.
Tested with Intel JS29F32G08ACMD1(4096 + 224) which is ONFI 2.0 compliant
nand.
Signed-off-by: Huang Shijie <b32955@freescale.com>
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Add the manufactor ID for SanDisk.
Make preparation for SanDisk SDTNRGAMA-008G.
Signed-off-by: Huang Shijie <b32955@freescale.com>
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
According to the Open NAND Flash Interface Specification (ONFI) Revision
3.1 "Parameters are always transferred on the lower 8-bits of the data
bus." for the Get Features and Set Features commands.
So using read_buf and write_buf is wrong for 16-bit wide nand chips as
they use I/O[15:0]. The Get Features command is easily fixed using 4
times the read_byte callback. For Set Features implement a new
overwritable callback "write_byte". Still I expect the default to work
just fine for all controllers and making it overwriteable was just done
for symmetry.
Signed-off-by: Uwe Kleine-König <u.kleine-koenig@pengutronix.de>
[Brian: fixed warning]
Tested-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
To be consistent with the rest of include/linux/mtd/nand.h, we should
use the __packed shorthand instead of __attribute__((packed)).
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Acked-by: Huang Shijie <b32955@freescale.com>
Micron provides READ RETRY support via the ONFI vendor-specific
parameter block (to indicate how many read-retry modes are available)
and the ONFI {GET,SET}_FEATURES commands with a vendor-specific feature
address (to support reading/switching the current read-retry mode).
The recommended sequence is as follows:
1. Perform PAGE_READ operation
2. If no ECC error, we are done
3. Run SET_FEATURES with feature address 89h, mode 1
4. Retry PAGE_READ operation
5. If ECC error and there are remaining supported modes, increment the
mode and return to step 3. Otherwise, this is a true ECC error.
6. Run SET_FEATURES with feature address 89h, mode 0, to return to the
default state.
This patch implements the chip->setup_read_retry() callback for
Micron and fills in the chip->read_retries.
Tested on Micron MT29F32G08CBADA, which supports 8 read-retry modes.
The Micron vendor-specific table was checked against the datasheets for
the following Micron NAND:
Needs retry Cell-type Part number Vendor revision Byte 180
----------- --------- ---------------- --------------- ------------
No SLC MT29F16G08ABABA 1 Reserved (0)
No MLC MT29F32G08CBABA 1 Reserved (0)
No SLC MT29F1G08AACWP 1 0
Yes MLC MT29F32G08CBADA 1 08h
Yes MLC MT29F64G08CBABA 2 08h
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Acked-by: Huang Shijie <b32955@freescale.com>
Modern MLC (and even SLC?) NAND can experience a large number of
bitflips (beyond the recommended correctability capacity) due to drifts
in the voltage threshold (Vt). These bitflips can cause ECC errors to
occur well within the expected lifetime of the flash. To account for
this, some manufacturers provide a mechanism for shifting the Vt
threshold after a corrupted read.
The generic pattern seems to be that a particular flash has N read retry
modes (where N = 0, traditionally), and after an ECC failure, the host
should reconfigure the flash to use the next available mode, then retry
the read operation. This process repeats until all bitfips can be
corrected or until the host has tried all available retry modes.
This patch adds the infrastructure support for a
vendor-specific/flash-specific callback, used for setting the read-retry
mode (i.e., voltage threshold).
For now, this patch always returns the flash to mode 0 (the default
mode) after a successful read-retry, according to the flowchart found in
Micron's datasheets. This may need to change in the future if it is
determined that eventually, mode 0 is insufficient for the majority of
the flash cells (and so for performance reasons, we should leave the
flash in mode 1, 2, etc.).
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Acked-by: Huang Shijie <b32955@freescale.com>
The @cellinfo fields contains unused information, such as write caching,
internal chip numbering, etc. But we only use it to check the SLC or MLC.
This patch tries to make it more clear and simple, renames the @cellinfo
to @bits_per_cell.
In order to avoiding the bisect issue, this patch also does the following
changes:
(0) add a macro NAND_CI_CELLTYPE_SHIFT to avoid the hardcode.
(1) add a helper to parse out the cell type : nand_get_bits_per_cell()
(2) parse out the cell type for extended-ID chips and the full-id nand chips.
Signed-off-by: Huang Shijie <b32955@freescale.com>
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Add a helper to check if a nand chip is SLC or MLC.
This helper makes the code more readable.
Signed-off-by: Huang Shijie <b32955@freescale.com>
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Add an instance of an anonymous struct to store the ECC info for full id
nand chips.
@ecc.strength_ds: ECC correctability from the datasheet.
@ecc.step_ds: ECC size required by the @ecc.strength_ds,
These two fields are all from the datasheet.
Also add the necessary macros to make the code simple and clean.
Signed-off-by: Huang Shijie <b32955@freescale.com>
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
add a helper to get the supported features for ONFI nand.
Also add the neccessary macros.
Signed-off-by: Huang Shijie <b32955@freescale.com>
Reviewed-and-tested-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Since the ONFI 2.1, the onfi spec adds the Extended Parameter Page
to store the ECC info.
The onfi spec tells us that if the nand chip's recommended ECC codeword
size is not 512 bytes, then the @ecc_bits is 0xff. The host _SHOULD_ then
read the Extended ECC information that is part of the extended parameter
page to retrieve the ECC requirements for this device.
This patch adds
[1] the neccessary fields for nand_onfi_params{},
[2] and adds the onfi_ext_ecc_info{} for Extended ECC information,
[3] adds onfi_ext_section{} for extended sections,
[4] and adds onfi_ext_param_page{} for the Extended Parameter Page.
Acked-by: Pekon Gupta <pekon@ti.com>
Signed-off-by: Huang Shijie <b32955@freescale.com>
Reviewed-and-tested-by: Brian Norris <computersforpeace@gmail.com>
[Brian: amended for checkpatch.pl]
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
1.) Why add the ECC information to the nand_chip{} ?
Each nand chip has its requirement for the ECC correctability, such as
"4bit ECC for each 512Byte" or "40bit ECC for each 1024Byte".
This ECC info is very important to the nand controller, such as gpmi.
Take the Micron MT29F64G08CBABA for example, its geometry is
8KiB page size, 744 bytes oob size and it requires 40bit ECC per 1KiB.
If we do not provide the ECC info to the gpmi nand driver, it has to
calculate the ECC correctability itself. The gpmi driver will gets the 56bit
ECC for per 1KiB which is beyond its BCH's 40bit ecc capibility.
The gpmi will quits in this case. But in actually, the gpmi can supports
this nand chip if it can get the right ECC info.
2.) about the new fields.
The @ecc_strength_ds stands for the ecc bits needed within the @ecc_step_ds.
The two fields should be set from the nand chip's datasheets.
For example:
"4bit ECC for each 512Byte" could be:
@ecc_strength_ds = 4, @ecc_step_ds = 512.
"40bit ECC for each 1024Byte" could be:
@ecc_strength_ds = 40, @ecc_step_ds = 1024.
3.) Why do not re-use the @strength and @size in the nand_ecc_ctrl{}?
The @strength and @size in nand_ecc_ctrl{} is used by the nand controller
driver, while the @ecc_strength_ds and @ecc_step_ds are get from the datasheet.
Signed-off-by: Huang Shijie <b32955@freescale.com>
Reviewed-and-tested-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
nand_base.c shouldn't have to know the implementation details of
nand_bbt's in-memory BBT. Specifically, nand_base shouldn't perform the
bit masking and shifting to isolate a BBT entry.
Instead, just move some of the BBT code into a new nand_markbad_bbt()
interface. This interface allows external users (i.e., nand_base) to
mark a single block as bad in the BBT. Then nand_bbt will take care of
modifying the in-memory BBT and updating the flash-based BBT (if
applicable).
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Spansion's S34MLx chips support ONFI but not the GET/SET FEATURES calls.
Signed-off-by: David Mosberger <dmosberger@gmail.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
The oob size of Micron's MT29F64G08CBABAWP is 744 bytes.
So increase the NAND_MAX_OOBSIZE to 744.
Signed-off-by: Huang Shijie <b32955@freescale.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
This remedies a few problems:
(1) The use of "the" vs. "a" is a little confusing, IMO.
(2) nand_chip.block_bad is used exclusively for checking the OOB bad
block markers of a NAND. Any BBT functionality is handled in
nand_bbt.c, so this description should differentiate itself from
nand_bbt.c.
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
This patch adds support for subpage (partial-page) writes when using
hardware based ECC schemes.
Advantages:
(1) reduces storage overhead when using file-systems like UBIFS, which
store LEB header at page-size granularity.
(2) allows independent subpage writes, thereby increasing NAND storage
efficiency for non-page aligned data.
+ updated cafe_nand and lpc32xx_mlc NAND drivers for change in
chip->write_page interface.
Signed-off-by: Gupta, Pekon <pekon@ti.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Notice that all the flashes belonging to the "legacy ID" class have 512 bytes
NAND page. This means we may simplify the 'LEGACY_ID_NAND()' macro as well as
the NAND ID table a little.
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
As time goes on, we begin to meet the situation that we can not get enough
information from some nand chips's id data. Take some Toshiba's nand chips
for example. I have 4 Toshiba's nand chips in my hand:
TC58NVG2S0F, TC58NVG3S0F, TC58NVG5D2, TC58NVG6D2
When we read these chips' datasheets, we will get the geometry of these chips:
TC58NVG2S0F : 4096 + 224
TC58NVG3S0F : 4096 + 232
TC58NVG5D2 : 8192 + 640
TC58NVG6D2 : 8192 + 640
But we can not parse out the correct oob size for these chips from the id data.
This patch adds some new fields to the nand_flash_dev{}:
@id_len: the valid length of the id data. See the comments in
nand_id_has_period()
@oobsize: the oob size.
Signed-off-by: Huang Shijie <b32955@freescale.com>
Reviewed-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Introduce a helpful macro for the maximum NAND ID sequence length instead of
using the "8" magic number.
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Acked-by: Huang Shijie <shijie8@gmail.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Use 'unsigned int' instead of 'unsigned long' in the NAND chip description data
structure, because 32-bits is more than enough for our purposes. We do not need
64-bits, which is what we end up on 64-bit architectures. We declare many
instances of this data structure, so this should help saving some amount of
memory.
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Up until now we identified NAND chips by the 'device ID' part of the full chip
ID array, which is the second full ID array byte. However, the newest flashes
use the same device ID for chips with identical page and eraseblock sizes, but
different OOB sizes. And unfortunately, it is not clear if there is a
"standard" way to fetch the OOB size from chip's full ID array. Here is an
example:
Toshiba TC58NVG2S0F: 0x98, 0xdc, 0x90, 0x26, 0x76, 0x15, 0x01, 0x08
Toshiba TC58NVG3S0F: 0x98, 0xd3, 0x90, 0x26, 0x76, 0x15, 0x02, 0x08
The first one is a 512MiB NAND chip with 4KiB NAND pages, 256KiB eraseblock
size and 224 bytes OOB. The second one is a 1GiB NAND chip with the same page
and eraseblock sizes, but with 232 bytes OOB.
This means that we have to store full ID in our NAND flashes table in order to
distinguish between these 2.
This patch adds the 'id[8]' field to the 'struct nand_flash_dev' structure, and
it makes it to be a part of anonymous union, where the second member is a
structure containing the 'mfr_id' and 'dev_id' bytes. The union makes sure that
'mfr_id' refers the same RAM address as 'id[0]' and 'dev_id' refers the same
RAM address as 'id[1]'. The only motivation for the union is an assumption that
'type->dev_id' is more readable than 'type->id[1]'.
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Introduce helper macros for defining NAND chips. These macros do not really add
much value in the current code-base. However, we are going to add full ID
support which adds some more complexity to the table, and helper macros become
useful for readability.
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
The 'id' is a bit confusing name because NAND IDs are multi-byte. Re-name
it to 'dev_id' to make it clear that this is the "device ID" part (the second
byte).
While on it, clean-up the commentary for 'struct nand_flash_dev'.
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Acked-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
We have this unused macro, let's use it and justify its existence.
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Acked-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
It is unused.
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Acked-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
It is not used anywhere.
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Acked-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
We have only one AG-AND driver and it was not touched since 2005. It looks
like AG-AND was not really make it to mass-production and can be considered
a dead technology.
Along with the AG-AND support, this patch removes the BBT_AUTO_REFRESH feature,
because the only user of this feature is AG-AND. And even though it is
implemented as a generic feature, I prefer to remove it because NAND flashes do
not really need it in this form.
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Acked-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
This partially reverts commit 1696e6bc2a
("mtd: nand: kill NAND_NO_READRDY").
In that patch I overlooked a few things.
The original documentation for NAND_NO_READRDY included "True for all
large page devices, as they do not support autoincrement." I was
conflating "not support autoincrement" with the NAND_NO_AUTOINCR option,
which was in fact doing nothing. So, when I dropped NAND_NO_AUTOINCR, I
concluded that I then could harmlessly drop NAND_NO_READRDY. But of
course the fact the NAND_NO_AUTOINCR was doing nothing didn't mean
NAND_NO_READRDY was doing nothing...
So, NAND_NO_READRDY is re-introduced as NAND_NEED_READRDY and applied
only to those few remaining small-page NAND which needed it in the first
place.
Cc: stable@kernel.org [3.5+]
Reported-by: Alexander Shiyan <shc_work@mail.ru>
Tested-by: Alexander Shiyan <shc_work@mail.ru>
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
The driver call nand_scan_ident in 8 bit mode, then
readid or onfi detection are done (and detect bus width).
The driver should update its bus width before calling nand_scan_tail.
This work because readid and onfi are read work 8 byte mode.
Note that nand_scan_ident send command (NAND_CMD_RESET, NAND_CMD_READID, NAND_CMD_PARAM), address and read data
The ONFI specificication is not very clear for x16 device if high byte of address should be driven to 0,
but according to [1] it should be ok to not drive it during autodetection.
[1]
3.3.2. Target Initialization
[...]
The Read ID and Read Parameter Page commands only use the lower 8-bits of the data bus.
The host shall not issue commands that use a word data width on x16 devices until the host
determines the device supports a 16-bit data bus width in the parameter page.
Signed-off-by: Matthieu CASTET <matthieu.castet@parrot.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Add missing colons to fix kernel-doc generation warnings.
Signed-off-by: Robert P. J. Day <rpjday@crashcourse.ca>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Some Hynix and Samsung MLC NAND have 640B OOB size. Sooner or later, we should
dynamically allocate the buffers that use these macros.
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
add onfi_get_async_timing_mode() to get the supportted asynchronous
timing mode.
add onfi_get_sync_timing_mode() to get the supportted synchronous
timing mode.
Also add the neccessary macros : the timing modes.
Signed-off-by: Huang Shijie <b32955@freescale.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Add the set-features(0xef)/get-features(0xee) helpers for ONFI nand.
Also add the necessary macros.
Signed-off-by: Huang Shijie <b32955@freescale.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
In the absence of any formal documentation of the nand interface, I thought this
patch to the header file might be helpful.
Signed-off-by: Mike Dunn <mikedunn@newsguy.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Added a NAND device flag for subpage read support. Previously this was
hard coded based on large page and soft ECC.
Updated base NAND driver to use the new subpage read flag if the NAND is
large page and soft ECC.
Signed-off-by: Jeff Westfahl <jeff.westfahl@ni.com>
Reviewed-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Fix kernel-doc warning in <linux/mtd/nand.h>:
Warning(include/linux/mtd/nand.h:659): No description found for parameter 'read_byte'
Signed-off-by: Randy Dunlap <rdunlap@xenotime.net>
Acked-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Just as Artem suggested:
"Both UBI and JFFS2 are able to read verify what they wrote already.
There are also MTD tests which do this verification. So I think there
is no reason to keep this in the NAND layer, let alone wasting RAM in
the driver to support this feature. Besides, it does not work for sub-pages
and many drivers have it broken. It hurts more than it provides benefits."
So kill MTD_NAND_VERIFY_WRITE entirely.
Signed-off-by: Huang Shijie <shijie8@gmail.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
The NAND_CHIPOPTIONS_MSK has limited utility and is causing real bugs. It
silently masks off at least one flag that might be set by the driver
(NAND_NO_SUBPAGE_WRITE). This breaks the GPMI NAND driver and possibly
others.
Really, as long as driver writers exercise a small amount of care with
NAND_* options, this mask is not necessary at all; it was only here to
prevent certain options from accidentally being set by the driver. But the
original thought turns out to be a bad idea occasionally. Thus, kill it.
Note, this patch fixes some major gpmi-nand breakage.
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Tested-by: Huang Shijie <shijie8@gmail.com>
Cc: stable@vger.kernel.org
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
There is an implemention of hardware ECC write page function which may return an
error indication.
For instance, using Atmel HW PMECC to write one page into a nand flash, the hardware
engine will compute the BCH ecc code for this page. so we need read a the
status register to theck whether the ecc code is generated.
But we cannot assume the status register always can be ready, for example,
incorrect hardware configuration or hardware issue, in such case we need
write_page() to return a error code.
Since the definition of 'write_page' function in struct nand_ecc_ctrl is 'void'.
So this patch will:
1. add return 'int' value for 'write_page' function.
2. to be consitent, add return 'int' value for 'write_page_raw' fuctions too.
3. add code to test the return value, and if negative, indicate an
error happend when write page with ECC.
4. fix the compile warning in all impacted nand flash driver.
Note: I couldn't compile-test all of these easily, as some had ARCH dependencies.
Signed-off-by: Josh Wu <josh.wu@atmel.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
According to its documentation, the NAND_NO_READRDY option is always used
when autoincrement is not supported. Autoincrement support was recently
dropped, so we can drop this options as well (defaulting to "no read ready
check").
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
As of [mtd: nand: remove autoincrement 'sndcmd' code], the
NAND_CMD_READ0 command is issued unconditionally.
Thus, read_oob/read_oob_raw's 'sndcmd' argument is no longer needed, as
well as their return code.
Remove the 'sndcmd' parameter, and set the return code to 0.
Signed-off-by: Shmulik Ladkani <shmulik.ladkani@gmail.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
New NAND controllers can perform read/write via HW engines which don't expose
OOB data in their DMA mode. To reflect this, we should rework the nand_chip /
nand_ecc_ctrl interfaces that assume that drivers will always read/write OOB
data in the nand_chip.oob_poi buffer. A better interface includes a boolean
argument that explicitly tells the callee when OOB data is requested by the
calling layer (for reading/writing to/from nand_chip.oob_poi).
This patch adds the 'oob_required' parameter to each relevant {read,write}_page
interface; all 'oob_required' parameters are left unused for now. The next
patch will set the parameter properly in the nand_base.c callers, and follow-up
patches will make use of 'oob_required' in some of the callee functions.
Note that currently, there is no harm in ignoring the 'oob_required' parameter
and *always* utilizing nand_chip.oob_poi, but there can be
performance/complexity/design benefits from avoiding filling oob_poi in the
common case. I will try to implement this for some drivers which can be ported
easily.
Note: I couldn't compile-test all of these easily, as some had ARCH
dependencies.
[dwmw2: Merge later 1/0 vs. true/false cleanup]
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Reviewed-by: Shmulik Ladkani <shmulik.ladkani@gmail.com>
Acked-by: Jiandong Zheng <jdzheng@broadcom.com>
Acked-by: Mike Dunn <mikedunn@newsguy.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Lantiq SoCs have a External Bus Unit (EBU) that is used to attach MTD media.
As we need to co-exist with PCI on the same bus, certain swapping settings must
be applied. Similar to the NOR map driver we need to apply a fix to make NAND
work. The easiest way is to use byte reads.
Signed-off-by: John Crispin <blogic@openwrt.org>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
No drivers use auto-increment NAND, so kill the NO_AUTOINCR option entirely.
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Huang Shijie