mtd: rawnand: Use nanddev_mtd_max_bad_blocks()
nanddev_mtd_max_bad_blocks() is implemented by the generic NAND layer and is already doing what we need. Reuse this function instead of having our own implementation. While at it, get rid of the ->max_bb_per_die and ->blocks_per_die fields which are now unused. Signed-off-by: Boris Brezillon <bbrezillon@kernel.org> Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com> Reviewed-by: Frieder Schrempf <frieder.schrempf@kontron.de>
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@ -4297,42 +4297,6 @@ static int nand_block_markbad(struct mtd_info *mtd, loff_t ofs)
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return nand_block_markbad_lowlevel(mtd_to_nand(mtd), ofs);
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return nand_block_markbad_lowlevel(mtd_to_nand(mtd), ofs);
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}
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}
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/**
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* nand_max_bad_blocks - [MTD Interface] Max number of bad blocks for an mtd
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* @mtd: MTD device structure
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* @ofs: offset relative to mtd start
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* @len: length of mtd
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*/
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static int nand_max_bad_blocks(struct mtd_info *mtd, loff_t ofs, size_t len)
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{
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struct nand_chip *chip = mtd_to_nand(mtd);
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u32 part_start_block;
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u32 part_end_block;
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u32 part_start_die;
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u32 part_end_die;
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/*
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* max_bb_per_die and blocks_per_die used to determine
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* the maximum bad block count.
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*/
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if (!chip->max_bb_per_die || !chip->blocks_per_die)
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return -ENOTSUPP;
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/* Get the start and end of the partition in erase blocks. */
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part_start_block = mtd_div_by_eb(ofs, mtd);
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part_end_block = mtd_div_by_eb(len, mtd) + part_start_block - 1;
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/* Get the start and end LUNs of the partition. */
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part_start_die = part_start_block / chip->blocks_per_die;
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part_end_die = part_end_block / chip->blocks_per_die;
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/*
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* Look up the bad blocks per unit and multiply by the number of units
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* that the partition spans.
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*/
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return chip->max_bb_per_die * (part_end_die - part_start_die + 1);
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}
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/**
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/**
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* nand_suspend - [MTD Interface] Suspend the NAND flash
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* nand_suspend - [MTD Interface] Suspend the NAND flash
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* @mtd: MTD device structure
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* @mtd: MTD device structure
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@ -5819,7 +5783,7 @@ static int nand_scan_tail(struct nand_chip *chip)
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mtd->_block_isreserved = nand_block_isreserved;
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mtd->_block_isreserved = nand_block_isreserved;
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mtd->_block_isbad = nand_block_isbad;
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mtd->_block_isbad = nand_block_isbad;
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mtd->_block_markbad = nand_block_markbad;
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mtd->_block_markbad = nand_block_markbad;
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mtd->_max_bad_blocks = nand_max_bad_blocks;
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mtd->_max_bad_blocks = nanddev_mtd_max_bad_blocks;
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/*
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/*
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* Initialize bitflip_threshold to its default prior scan_bbt() call.
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* Initialize bitflip_threshold to its default prior scan_bbt() call.
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@ -251,9 +251,6 @@ int nand_onfi_detect(struct nand_chip *chip)
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memorg->bits_per_cell = p->bits_per_cell;
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memorg->bits_per_cell = p->bits_per_cell;
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chip->bits_per_cell = p->bits_per_cell;
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chip->bits_per_cell = p->bits_per_cell;
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chip->max_bb_per_die = le16_to_cpu(p->bb_per_lun);
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chip->blocks_per_die = le32_to_cpu(p->blocks_per_lun);
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if (le16_to_cpu(p->features) & ONFI_FEATURE_16_BIT_BUS)
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if (le16_to_cpu(p->features) & ONFI_FEATURE_16_BIT_BUS)
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chip->options |= NAND_BUSWIDTH_16;
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chip->options |= NAND_BUSWIDTH_16;
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@ -1015,9 +1015,6 @@ struct nand_legacy {
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* @id: [INTERN] holds NAND ID
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* @id: [INTERN] holds NAND ID
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* @parameters: [INTERN] holds generic parameters under an easily
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* @parameters: [INTERN] holds generic parameters under an easily
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* readable form.
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* readable form.
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* @max_bb_per_die: [INTERN] the max number of bad blocks each die of a
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* this nand device will encounter their life times.
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* @blocks_per_die: [INTERN] The number of PEBs in a die
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* @data_interface: [INTERN] NAND interface timing information
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* @data_interface: [INTERN] NAND interface timing information
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* @cur_cs: currently selected target. -1 means no target selected,
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* @cur_cs: currently selected target. -1 means no target selected,
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* otherwise we should always have cur_cs >= 0 &&
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* otherwise we should always have cur_cs >= 0 &&
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@ -1076,8 +1073,6 @@ struct nand_chip {
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struct nand_id id;
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struct nand_id id;
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struct nand_parameters parameters;
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struct nand_parameters parameters;
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u16 max_bb_per_die;
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u32 blocks_per_die;
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struct nand_data_interface data_interface;
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struct nand_data_interface data_interface;
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